| PART |
Description |
Maker |
| SSTS3060CT |
High Junction Temperature
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
|
| SSTS20100D |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20U60P5 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L200CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SMA6F12AVCL SMA6F13A SMA6F13A-TR SMA6F5.0A |
High junction temperature Transil?
|
STMicroelectronics
|
| SMM4F SMM4F5.0A |
High junction temperature Transil
|
STMicroelectronics
|
| SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
High junction temperature Transil
|
STMicroelectronics
|
| 2SK710 E001574 SK710 |
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
SILICON N CHANNEL JUNCTION TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
